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| MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM100DY-2HK * * * * * IC Collector current ........................ 100A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X B2 E2 B2X 480.25 C2E1 30 E2 E2 B2 6 15 62 C1 C2E1 E2 B1 E1 C1 10.5 6 B1X 9 B1X E1 B1 14 8 15.3 3 17 25 8 17 25 8 17 21.5 3 8 1.8 3-M6 Tab#110, t=0.5 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 100 100 800 5 1000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=100A, IB=2A -IC=100A (diode forward voltage) IC=100A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=100A, IB1=-IB2=2A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 400 2.5 3.5 1.8 -- 3.0 15 3.0 0.155 0.65 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 200 Tj=25C COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 160 IB=2.0A 120 IB=1.0A IB=0.6A 80 IB=0.4A IB=0.2A 10 4 7 5 3 2 10 3 7 5 3 2 VCE=5.0V VCE=2.8V 40 0 0 1 2 3 4 5 VCE (V) 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 VCE=2.0V Tj=25C 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 VBE(sat) SATURATION VOLTAGE VCE(sat) IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3.4 VBE (V) 3.8 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 5 IC= 150A IC= 100A ton, ts, tf (s) 4 10 2 7 5 3 2 10 1 7 5 3 2 VCC=600V IB1=-IB2=2A ts 3 2 IC=50A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) SWITCHING TIME IC=70A tf 10 0 ton 7 5 3 Tj=25C 2 Tj=125C 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 VCC=600V IC=100A IB1=2A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 200 COLLECTOR CURRENT IC (A) ts, tf (s) 175 150 125 100 75 50 25 0 0 Tj=125C IB2= -2A IB2=-5A SWITCHING TIME ts tf 2 3 4 5 7 10 0 2 3 4 5 7 10 1 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 tw=50s 100s 1m 200 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 90 SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION s s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 4 5 7 0.25 DC VCE (V) CASE TEMPERATURE TC (C) 0.20 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.15 0.10 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.05 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 1000 800 Irr (A), Qrr (c) 10 2 7 VCC=600V 5 IB1=-IB2=2.0A Tj=25C 4 Tj=125C 3 2 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 Irr trr (s) 600 Qrr 10 0 400 trr 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 -1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 |
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